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FHX13X, FHX14X
GaAs FET & HEMT Chips FEATURES
* * * * Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg 0.15m, Wg = 200m Gold Gate Metallization for High Reliability
DESCRIPTION
The FHX13X, FHX14X are Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05mA respectively with gate resistance of 4000. 3. The operating channel temperature (Tch) should not exceed 80C.
Symbol VDS VGS Pt* Tstg Tch
Rating 3.5 -3.0 180 -65 to +175 175
Unit V V mW C C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX13X Associated Gain Noise Figure FHX14X Associated Gain Thermal Resistance Gas Rth Channel to Case Gas NF Symbol IDSS gm Vp VGSO NF VDS = 2V IDS = 10mA f = 12GHz Test Conditions VDS = 2V, VGS = 0V VDS = 2V, IDS = 10mA VDS = 2V, IDS = 1mA IGS = -10A Min. 10 35 -0.1 -3.0 11.0 11.0 Limit Typ. Max. 30 50 -0.7 0.45 13.0 0.55 13.0 220 60 -1.5 0.50 0.60 300 Unit mA mS V V dB dB dB dB C/W
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.2 July 1999
1
FHX13X, FHX14X
GaAs FET & HEMT Chips
POWER DERATING CURVE 200 Total Power Dissipation (W) 150 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 Drain Current (mA) 30 VGS =0V
100
20
-0.2V
50
10
-0.4V -0.6V -0.8V 1 2 3 Drain-Source Voltage (V)
0 0
50
100
150
200
0
4
Ambient Temperature (C) NF & Gas vs. IDS 3.0 2.5 Noise Figure (dB) 2.0 1.5 1.0 0.5 NF 10 20 30 f=12GHz VDS=2V Gas 14 Associated Gain (dB) Output Power (dBm) 13 12 11 10 9 0 -10
OUTPUT POWER vs. INPUT POWER 20 f=12GHz VDS=2V IDS=10mA
15
10
5
Drain Current (mA) NOISE PARAMETERS VDS=2V, IDS=10mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 24 opt (MAG) (ANG) 0.92 0.84 0.77 0.71 0.66 0.61 0.58 0.56 0.54 0.52 0.50 0.46 13 25 38 51 65 79 93 108 122 136 150 162 NFmin (dB) 0.28 0.30 0.32 0.34 0.39 0.45 0.56 0.68 0.86 1.03 1.22 1.43 Rn/50 0.65 0.54 0.41 0.31 0.23 0.17 0.12 0.09 0.07 0.07 0.07 0.07
-5 0 5 Input Power (dBm)
10
Ga (max) & |S21|2 vs. FREQUENCY 25 20 Gain (dB) 15 10
|S21|2
VDS=2V IDS=10mA
Ga (max)
5 0
4
6
8 1012
20
Frequency (GHz)
2
FHX13X, FHX14X
GaAs FET & HEMT Chips
+j50 +j25 +j100
12 24
S11 S22
+90
S21 S12
+j250 +j10
24 12
0
10 24
25
50
100
1 1 GHZ
1 GHZ
180
.05 1 GHZ 1 GHZ 1
.10
.15
.20
0
SCALE FOR |S12|
SCALE FOR |S21|
24
12
-j10
-j250
2 3 4 5
12
-j25 -j50
-j100
-90
S-PARAMETERS VDS = 2V, IDS = 10mA FREQUENCY (MHZ)
100 500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 21000 22000 23000 24000
S11 MAG
1.000 0.999 0.995 0.981 0.958 0.929 0.895 0.860 0.823 0.786 0.751 0.718 0.687 0.659 0.633 0.610 0.590 0.572 0.556 0.543 0.532 0.523 0.516 0.511 0.507 0.505
S21 ANG MAG
4.899 4.894 4.876 4.806 4.696 4.555 4.392 4.215 4.034 3.852 3.675 3.506 3.345 3.194 3.054 2.923 2.801 2.688 2.584 2.487 2.397 2.314 2.236 2.164 2.096 2.033
S12 ANG
179.2 175.9 171.9 163.9 156.1 148.6 141.5 134.8 128.4 122.4 116.8 111.5 106.5 101.8 97.3 93.0 88.9 85.0 81.3 77.7 74.2 70.8 67.5 64.4 61.3 58.3
S22 ANG
89.5 87.7 85.5 81.1 77.0 73.2 69.8 66.8 64.2 62.0 60.2 58.9 57.8 57.1 56.6 56.4 56.4 56.6 56.9 57.3 57.8 58.4 58.9 59.5 60.0 60.5
MAG
0.001 0.006 0.013 0.025 0.037 0.048 0.057 0.066 0.074 0.080 0.086 0.092 0.096 0.101 0.105 0.108 0.112 0.116 0.120 0.124 0.129 0.133 0.138 0.144 0.150 0.156
MAG
0.601 0.601 0.599 0.591 0.580 0.565 0.548 0.530 0.512 0.493 0.475 0.458 0.442 0.426 0.412 0.399 0.386 0.375 0.364 0.353 0.344 0.335 0.326 0.318 0.310 0.303
ANG
-0.5 -2.3 -4.6 -9.2 -13.5 -17.7 -21.5 -25.0 -28.3 -31.3 -34.0 -36.6 -39.0 -41.3 -43.6 -45.8 -47.9 -50.1 -52.3 -54.6 -56.9 -59.4 -62.0 -64.7 -67.5 -70.5
-0.9 -4.7 -9.4 -18.6 -27.7 -36.4 -44.9 -53.0 -60.7 -68.1 -75.3 -82.1 -88.7 -95.0 -101.2 -107.2 -113.0 -118.7 -124.2 -129.6 -134.9 -140.0 -145.0 -149.8 -154.6 -159.2
Gate Drain
NOTE:* The data includes bonding wires.
n: number of wires n=2 (0.3mm length, 20m Dia Au wire) n=2 (0.3mm length, 20m Dia Au wire)
Download S-Parameters, click here
Source n=4 (0.3mm length, 20m Dia Au wire)
3
FHX13X, FHX14X
GaAs FET & HEMT Chips
CHIP OUTLINE
44 96 (Unit: m)
60
154
60
44
96 45020
Die Thickness: 10020m
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200
SuperHEMT
TM
is a trademark of Fujitsu Limited.
4
70
35020

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